Memory

Williams supports a variety of technologies in the memory industry, including Magnetic Random Access Memory (MRAM), Ferroelectric Random Access Memory (FRAM), Phase-change Random Access Memory (PRAM). The memory industry and its applications yet to define which format will be the predominant technology.

Random Access Memory (RAM) acts as a relay device for information between a computer hard drive and processor. When a computer is turned on, the settings and operating system must be loaded from the hard drive through the RAM and into the processor. This may take a while, unless MRAM is used!

In Dynamic RAM (DRAM) information is stored using tiny capacitors. These capacitors act like a container for electrons. When the container is full (charged) the capacitor has a value of "1"; when it is empty (no charge) it has a value of "0". In order for the capacitor to work it must have a constant supply of electricity. If the power to conventional RAM is cut then all of the capacitors empty their electrons, thus all of the bit values become "0". This means that common RAM is "volatile".

MRAM serves the same purpose as normal RAM but it is "non-volatile". These devices operate in a similar way to GMR devices. Both types of devices depend upon a change in resistance between two thin film layers. However, MRAM functions by changing the electron spin of each layer as opposed to changing the magnetic polarity.

A number of MRAM devices have been constructed using GMR technology but seem somewhat impractical. Many developers of MRAM are utilizing what is known as a Magnetic Tunnel Junction (MTJ). Magnetic Tunneling is a quantum mechanical property of particles, which allows for them to pass through a non-conducting layer (TaN, AlO, etc.). If the non-conducting material is thin enough, electrons can pass through it without being disturbed.

Williams Products Used

Williams is the leading thin film materials supplier to the Memory industry. High performance GMR/TMR thin film heads and MRAM products are manufactured for magnetic data storage from our PureCON™ and ME™ grades of target materials.

Material offering for the Memory Market

Additional materials are available.

Specialty magnetic and non-magnetic alloys for GMR/TMR technology and MRAM technology are produced in a wide array of shapes and sizes meeting the requirements of virtually all deposition equipment. Targets are produced via vacuum induction melting or with our advanced Hybrid™ processing techniques. Materials are highly characterized in our analytical lab. Special attention is paid to grain size, homogeneity, gaseous and metallic impurities, pass through flux, as well as bulk compositional tolerances.

Williams has earned a position as a leading sputtering target supplier to the HDD market. We are the largest supplier to the thin film recording head market. Williams stands together with TFH makers in developing new materials enabling next generation GMR, TMR and CPP thin film heads. Our Xtended Life™ target designs, metallurgical product improvements, and cost of ownership solutions continue to assist TFH makers increase areal density while lowering overall costs.